NTE159M transistor working princple & pin configuration
Industry standard transistors such as NTE123A and NTE159M are widely used in various applications. So the polarity of the NTE123A transistor is NPN while the polarity of the NTE159M transistor is PNP. These transistors are available in the TO18 package, so they are used in amplifiers, mid-speed switching, etc. This transistor can be used as a switch or amplifier.
When the NTE159M transistor is used as an amplifier, it operates in the active region. When it is used as a switch, it acts in both areas such as cut-off and saturation. This article covers an overview of the NTE159M transistor, its pin configuration, features, specifications, and its applications.
What is the NTE159M transistor?
The NTE159M is a general-purpose PNP-type transistor and is available in a TO-18 package. The complementary NPN type transistor is the NTE123A. The maximum gain for the NTE159M is 300 and the collector current is 600 mA. The collector saturation voltage of this transistor is less than 1 volt, so it is applicable in amplifiers and switching-based circuits.
Both PNP and NPN transistors can form a complement pair so that they can be used where both PNP and NPN transistors are necessary such as H bridge circuits, push-pull circuits, class B amplifiers, etc. A replacement package for the NTE159M transistor is the 2N2907 transistor available in the TO-92 typical package.
Transistor NTE159M
The NTE159M transistor has three layers as P, N & P where the “N” layer is located between two “P” layers. In this transistor, the 'N' layer denotes the base terminal (B) and its polarity is negative at the base terminal. Layer P indicates the emitter (E) terminal and the polarity at this terminal will be positive (+). To do this, the base terminal of this transistor must be negative in comparison with the emitter terminal.
This is a bipolar junction transistor where conduction is done through both charge carriers such as electrons and holes but the majority of charge carriers in this transistor will be holes.
NTE159M Transistor Working:
The working of a PNP transistor is similar to that of an NPN including some exceptions like the voltage poles and the direction of current will be opposite in PNP as compared to NPN.
In PNP, the base terminal is negative while in NPN it is positive. These transistors are called current-controlled devices because, at the base terminal, a small current is used to control the huge current at the remaining terminals.
Once a voltage source is applied at the primary terminal of the PNP, it is biased, so it allows charge carriers such as holes to supply from the emitter terminal to the collector. Similarly in NPN the flow of current will be the same but the majority of the charge carriers are electrons.
NTE159M transistor Configuration:
The pin configuration of the NTE159M transistor includes three pins where each pin and its functions are presented below.
NTE159M Transistor Pin Configuration
Pin1 (Base): The bias of the transistor can be controlled through this pin. This pin is used to turn on/off the transistor.
Pin2 (the collector): This pin allows current to flow and is usually connected to the load.
Pin3 (Emitter): This pin drains current and connects to the GND terminal.
Features and Specifications:
Features and specifications of the NTE159M transistor include the following.
PNP type transistor.
DC or hFE gain ranges from 100 to 300.
The constant collector current or IC is 600mA.
The voltage from the collector terminal to the emitter or VCE is 60 volts.
The voltage from the collector to the base station or VCB is 60 volts.
The voltage from the emitter to the base station or VBE is 5 volts.
The package available is To-18.
The collector current is -0.6 A.
The collector dissipation is 0.4 watts.
The transmission frequency is 200MHz.
The operating and storage temperature range is -65 to +200 ° C.
Create a common base.
Diameter 5.84 mm.
The power dissipation is 0.4 Watt.
Dimensions 5.84 dia. x 5.33 AH.
The number of stations is 3.
Height 5.33 mm.
The number of items per slide is 1.
The material used is "Si".
Through-hole mounting type.
The complementary NTE159M PNP transistor is the NTE123 NPN transistor. The equivalent and replacement for the NTE159M transistor are 2N2907A.
The SMD version of the NTE159M transistor is:
DZT2907A, FMMT2907A (SOT-23), DXT2907A , FMMT2907AR (SOT-23), KN2907AS, FMMTA55 KST55 (SOT -23)-23), KTN2907AU, KST2907A (SOT-23), MMBTA55 , PMBT2907A (SOT-23), SMBTA55 (SOT-23), FJX2907A, MMST2907A (SOT-323), PZTA55, KTN2907AS (SOT-23) and PMST2907A
How to use the NTE159M transistor/circuit diagram:
The blown fuse indicator circuit using the NTE159M transistor is shown below. The electronic components required to make this circuit mainly include an NTE159 PNP bipolar transistor (Q1), a 1N4148/1N4001 semiconductor diode (D1), a red LED, a 510 ohm resistor R1 and a 510k ohm resistor R2.
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